At an event today in San Francisco, Intel announced one of the most important pieces of semiconductor news in many years: the company's upcoming 22nm processors will feature a fundamental change to ...

Since the shift to CMOS in the 1980s, designers have enjoyed the benefits of a technology whose power consumption was largely defined by the level of switching activity in the circuit. In many cases, ...

Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even ...

As downward scaling of transistors continues, optimizing power consumption for mobile devices is a major concern. Power consumption consists of two components: dynamic and static. Dynamic (active) ...

Physicists in the UK have found a way to overcome a major barrier blocking the use of graphene in electronic devices – how to prevent current leaking through a device when it is switched off. Graphene ...

Computers, despite all their apparent complexity, are basically just a large number of electronic switches, flicking on and off in the right order to process digital information. Semiconductor ...

The new transistors (above) have vertical current-carrying channels. In older designs (inset), the channels lie flat under the gates. In an effort to keep squeezing more components onto silicon chips, ...

(Nanowerk News) Scientists at the Fraunhofer Institute for Applied Solid State Physics IAF have succeeded in developing a novel type of transistor with extremely high cut-off frequencies: metal oxide ...

Not since Neil Armstrong took his first steps on the moon has the transistor seen such a dramatic change, and that change holds some big promises. "Intel has developed a complete high-k plus ...

DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...