While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...
A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...
Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
The Special Report on page 6 of this issue covers power supplies and loads and also offers coverage of products and technologies expected to be highlighted at APEC 2018, March 4-8 in San Antonio, TX.
STMicroelectronics has created its first galvanically isolated gate driver for GaN transistors. Called STGAP2GS the wide body SO-8W packaged single-channel driver can work with rails up to 1.2kV. The ...
These 20V bipolar transistors from Diodes are tiny, measuring 1.1×1.4mm and .5mm tall, yet capable of a continuous collector current of 1.5A for the NPN version (ZXTN26020DMF) and -1.25A for the PNP ...
* The transition to 3-D continues the pace of technology advancement, fueling Moore’s Law for years to come. * An unprecedented combination of performance improvement and power reduction to enable new ...
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